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STL33N60DM2 Fiches technique(PDF) 1 Page - STMicroelectronics |
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STL33N60DM2 Fiches technique(HTML) 1 Page - STMicroelectronics |
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1 / 15 page ![]() March 2016 DocID026781 Rev 2 1/15 This is information on a product in full production. www.st.com STL33N60DM2 N- channel 600 V, 0.115 Ω typ., 21 A MDmesh™ DM2 Power MOSFET in a PowerFLAT™ 8x8 HV package Datasheet - production data Figure 1: Internal schematic diagram Features Order code VDS @ TJmax RDS(on)max ID STL33N60DM2 650 V 0.140 Ω 21 A Fast-recovery body diode Extremely low gate charge and input capacitance Low on-resistance 100% avalanche tested Extremely high dv/dt ruggedness Zener-protected Applications Switching applications Description This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters. Table 1: Device summary Order code Marking Package Packaging STL33N60DM2 33N60DM2 PowerFLAT™ 8x8 HV Tape and reel 5 1 2 3 4 PowerFLA T™ 8x8 HV |
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