NE856 datasheet(3/25 Pages) NEC

3 / 25 page

SYMBOLS

PARAMETERS

UNITS

RATINGS

VCBO

Collector to Base Voltage

VCEO

Collector to Emitter Voltage

VEBO

Emitter to Base Voltage

3.0

Collector Current

100

Junction Temperature

°C

1502

TSTG

Storage Temperature

°C

-65 to +150

ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)

Notes:

1. Operation in excess of any one of these parameters may result

permanent damage.

2. Maximum TJ for the NE85600 and NE85635 is 200°C.

FORWARD CURRENT GAIN

vs. COLLECTOR CURRENT

Collector to Base Voltage, VCB (V)

Collector Current, IC (mA)

TYPICAL PERFORMANCE CURVES (TA = 25°C)

Ambient Temperature, TA (°C)

NE85632 AND NE85634

TOTAL POWER DISSIPATION

vs. AMBIENT TEMPERATURE

NE85633 AND NE85635

TOTAL POWER DISSIPATION vs.

AMBIENT TEMPERATURE

COLLECTOR TO BASE

CAPACITANCE vs. COLLECTOR

TO BASE VOLTAGE

NE856 SERIES

NE85635

NE85633

100

150

200

400

300

200

100

NE85634

Ceramic Substrate

2.5 cm X 0.7 mm

RTH (J-A) = 62.5˚C/W

NE85632

with Heat

Sink

Aluminum

Heat Sink

for NE85632

NE85632

Free Air

NE85634

Free Air

100

150

2.4

2.0

1.6

1.2

0.8

0.4

7.8

3.8

NE85634

NE85632/

NE85635

5.0

3.0

2.0

1.0

0.7

0.5

0.3

0.2

0.1

VCE = 10 V

500

300

200

100

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