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2SB508 Fiches technique(PDF) 2 Page - Inchange Semiconductor Company Limited

No de pièce 2SB508
Description  isc Silicon PNP Power Transistor
PDF  2 Pages
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Fabricant  ISC [Inchange Semiconductor Company Limited]
Site Internet  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2SB508 Fiches technique(HTML) 2 Page - Inchange Semiconductor Company Limited

  2SB508 Datasheet HTML 1Page - Inchange Semiconductor Company Limited 2SB508 Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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INCHANGE Semiconductor
isc website：www.iscsemi.com
isc & iscsemi is registered trademark
2
isc Silicon PNP Power Transistor
2SB508
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX UNIT
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC= -10mA ; IB= 0
-60
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= -2A; IB= -0.2A
-1.0
V
VBE(on)
Base-Emitter On Voltage
IC= -1A; VCE= -2V
-1.5
V
ICBO
Collector Cutoff Current
VCB= -20V; IE= 0
-100
μ
A
ICEO
Collector Cutoff Current
VCE= -60V; IB= 0
-5
mA
IEBO
Emitter Cutoff Current
VEB= -4V ; IC= 0
-1
mA
hFE-1
★
DC Current Gain
IC= -1A; VCE= -2V
40
320
hFE-2
DC Current Gain
IC= -0.1A ; VCE= -2V
40
fT
Current-Gain—Bandwidth Product
IC= -0.5A; VCE= -5V;ftest= 1.0MHz
8
MHz
COB
Output Capacitance
IE=0; VCB= -10V; f= 1.0MHz
130
pF
★
Pulse Test :Pulse Width=300us,Cuty cycle≤2.0%
hFE-1 Classifications
C
D
E
F
40-80
60-120
100-200
160-320



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