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2SA1013 Fiches technique(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SA1013 Fiches technique(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() INCHANGE Semiconductor isc website: www.iscsemi.com isc & iscsemi is registered trademark 1 isc Silicon PNP Transistor 2SA1013 DESCRIPTION · High Voltage and High Current Vceo=-160V(Min.) · Excellent hFE Linearity · Low Noise · Complement to Type 2SC2383 · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Audio frequency general purpose amplifier Applications · Driver stage amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -160 V VEBO Emitter-Base Voltage -6 V IC Collector Curren -1 A IB Base Curren -500 mA PC Collector Power Dissipation @TC=25℃ 900 mW TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ |
Numéro de pièce similaire - 2SA1013 |
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Description similaire - 2SA1013 |
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