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2SB1316 Fiches technique(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SB1316 Fiches technique(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc website:www.iscsemi.com isc & iscsemi is registered trademark 2 isc Silicon PNP Power Transistor 2SB1316 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNI T BVCBO Collector-Base breakdown voltage IC=-50uA -100 V BVCEO Collector-Emitter breakdown voltage IC=-5mA -100 V BVEBO Emitter-Base breakdown voltage IE=-5mA -10 V VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -1mA -1.5 V ICBO Collector Cutoff Current VCB= -100V; IE= 0 -10 μ A IEBO Emitter Cutoff Current VEB= -7V; IC= 0 -3.0 mA hFE DC Current Gain IC= -1A; VCE= -2V 1000 10000 COB Output Capacitance IE= 0; VCB= -10V; f= 1.0MHz 35 pF fT Current-Gain—Bandwidth Product IC= -0.1A; VCE= -5V,f= 100MHz 50 MHz |
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