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BDS16 Fiches technique(PDF) 1 Page - Inchange Semiconductor Company Limited

No de pièce BDS16
Description  isc Silicon NPN Power Transistor
PDF  2 Pages
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Fabricant  ISC [Inchange Semiconductor Company Limited]
Site Internet  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BDS16 Fiches technique(HTML) 1 Page - Inchange Semiconductor Company Limited

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NCHANGE Semiconductor
isc Product Specification
isc website：www.iscsemi.com
isc & iscsemi is registered trademark
1
isc Silicon NPN Power Transistor
BDS16
DESCRIPTION
·High Voltage: VCEV= 120V(Min)
·Low Saturation Voltage-
: VCE(sat)= 1.5V(Max)@ IC= 4A
·High Reliablity
APPLICATIONS
·Designed for power linear and switching application and
General puepose power.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
120
V
VCEO
Collector-Emitter Voltage
120
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
8
A
IB
Base Current
2
A
PC
Collector Power Dissipation
@ TC=25℃
50
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance, Junction to Case
2.5
℃/W
Rth j-a
Thermal Resistance, Junction to Ambient
62.5
℃/W


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