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BDY82 Fiches technique(PDF) 1 Page - Inchange Semiconductor Company Limited

No de pièce BDY82
Description  isc Silicon PNP Power Transistor
PDF  2 Pages
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Fabricant  ISC [Inchange Semiconductor Company Limited]
Site Internet  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BDY82 Fiches technique(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc website：www.iscsemi.com
isc & iscsemi is registered trademark
1
isc Silicon PNP Power Transistor
BDY82
DESCRIPTION
·
Continuous Collector Current-IC= -4A
·
Collector Power Dissipation-
: PC= 36W @TC= 25℃
·
Complement to Type BDY80
APPLICATIONS
·
Designed for general purpose switching and amplifier
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
3.5
℃
/W
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-35
V
VCEO
Collector-Emitter Voltage
-35
V
VEBO
Emitter-Base Voltage
-10
V
IC
Collector Current-Continuous
-4
A
IB
Base Current-Continuous
-2
A
PC
Collector Power Dissipation@TC=25℃
36
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-55~150
℃


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