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LM1391 Fiches technique(PDF) 2 Page - National Semiconductor (TI) |
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LM1391 Fiches technique(HTML) 2 Page - National Semiconductor (TI) |
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2 / 6 page ![]() Absolute Maximum Ratings If MilitaryAerospace specified devices are required please contact the National Semiconductor Sales OfficeDistributors for availability and specifications Supply Current 40 mADC Output Voltage 40 VDC Output Current 30 mADC Sync Input Voltage (Pin 3) 50 Vp-p Flyback Input Voltage (Pin 4) 50 Vp-p Power Dissipation (Package Limitation) Plastic Package (Note 1) 1000 mW Operating Temperature Range (Ambient) 0 Cto a70 C Storage Temperature Range b 65 Cto a150 C Lead Temperature (Soldering 10 sec) 260 C Electrical Characteristics TA e 25 C (see test circuit all switches in position 1) Parameter Conditions Min Typ Max Units Regulated Voltage (Pin 6) I6 e 22 mADC 80 86 92 VDC Supply Current (Pin 6) 20 mADC Collector-Emitter Saturation Voltage IC1 e 20 mA 030 040 VDC of Output Transistor (Pin 1) Pin 4 Voltage 20 VDC Oscillator Pull-in Range Adjust RH g 300 Hz Oscillator Hold-in Range Adjust RH g 900 Hz Static Phase Error D f e 300 Hz 05 m s Free-running Frequency Supply S1 in position 2 g 30 HzVDC Dependance Phase Detector Leakage (Pin 5) All switches in position 2 g 10 m A Sync Input Voltage (Pin 3) 20 50 Vp-p Sawtooth Input Voltage (Pin 4) 10 30 Vp-p Maximum Oscillator Frequency 500 kHz Note 1 For operation in ambient temperatures above 25 C the device must be derated based on a 150 C maximum junction temperature and a thermal resistance of 120 CW junction to ambient Typical Performance Characteristics Time Frequency Drift vs Warm-Up Frequency vs Temperature Voltage Output Duty Cycle vs VM TLH7889 – 3 2 |
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