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MJE521 Fiches technique(PDF) 1 Page - Inchange Semiconductor Company Limited

No de pièce MJE521
Description  isc Silicon NPN Power Transistor
PDF  2 Pages
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Fabricant  ISC [Inchange Semiconductor Company Limited]
Site Internet  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

MJE521 Fiches technique(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
1
isc Website：www.iscsemi.com
isc & iscsemi is registered trademark
isc Silicon NPN Power Transistor
MJE521
DESCRIPTION
·
Collector–Emitter Sustaining Voltage-
: VCEO(SUS) = 40 V(Min)
·
DC Current Gain-
: hFE = 40(Min) @ IC= 1A
·
Complement to Type MJE371
APPLICATIONS
·
Designed for use in general−purpose amplifier and
switching circuits applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
40
V
VCEO
Collector-Emitter Voltage
40
V
VEBO
Emitter-Base Voltage
4
V
IC
Collector Current-Continuous
4
A
ICM
Collector Current-Peak
8
A
IB
Base Current-Continuous
2
A
PC
Collector Power Dissipation
TC=25℃
40
W
Ti
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
3.12
℃
/W


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