CJMPD08 datasheet(1/3 Pages) ZPSEMI

No de pièce	CJMPD08

Description	P-Channel Power MOSFET

PDF	3 Pages

Scroll/Zoom	100%

Fabricant	ZPSEMI [ZP Semiconductor]

Site Internet	http://zpsemi.com/

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DFNWB2*2-6L-A Plastic-Encapsulate MOSFETS

CJMPD08

P-Channel Power MOSFET

General Description

The CJMPD08 uses advanced trench technology and design to

Provide excellent RDS(on) with low gate charge. This device is suitable for use

in DC-DC conversion applications.

FEATURE

Low Profile for Easy Fit in Thin Environments

Bidirectional Current Folw with Common Source Configuration

APPLICATIONS

Optimized for Battery and Load Management Applications in Portable Equipment

Li-Ion Battery Charging and Protection Circuits

High Power Management in Portable , Battery Powered Products

High Side Load Switch

MARKING:

Tape Drawing

(Unit : mm)

Maximum ratings (Ta=25

℃ unless otherwise noted)

Parameter

Symbol

Value

Unit

Drain-Source Voltage

VDS

-20

Gate-Source Voltage

VGS

±8

V

Continuous Drain Current(Note1a)

ID

-3.6

A

Power Dissipation (Note1a)

PD

1.4

W

Power Dissipation (Note1b)

PD

0.7

W

Thermal Resistance from Junction to Ambient (Note1a)

RθJA

86

℃/W

DFNWB2*2-6L-A

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