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PCA2000U Fiches technique(PDF) 13 Page - NXP Semiconductors |
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PCA2000U Fiches technique(HTML) 13 Page - NXP Semiconductors |
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13 / 19 page ![]() 2003 Dec 17 13 Philips Semiconductors Product specification 32 kHz watch circuit with programmable adaptive motor pulse PCA2000; PCA2001 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). Notes 1. For writing to the OTP cells, the supply voltage VDD can be raised to a maximum of 12 V for a period of 1 second. 2. Connecting the battery with reversed polarity does not destroy the circuit, but in this condition a large current flows, which rapidly discharges the battery. HANDLING Inputs and outputs are protected against electrostatic discharges in normal handling. However to be totally safe, it is advised to undertake handling precautions appropriate to handling MOS devices. Advice can be found in “Data handbook IC16: General; handling MOS devices”. CHARACTERISTICS VDD = 1.55 V; VSS =0V; fosc = 32.768 kHz; Tamb =25 °C; quartz crystal: RS =40kΩ,C1 = 2 to 3 fF, CL = 8.2 pF; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDD supply voltage VSS = 0 V; notes 1 and 2 −1.8 +7.0 V Vi all input voltages VSS − 0.5 VDD + 0.5 V Tamb ambient temperature −10 +60 °C Tstg storage temperature −30 +100 °C to(sc) output short-circuit duration indefinite s SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Supply VDD supply voltage normal operating mode; Tamb = −10 to +60 °C 1.10 1.55 3.60 V ∆VDD supply voltage variation ∆V/∆t=1V/µs −− 0.25 V IDD supply current between motor pulses − 90 120 nA between motor pulses at VDD = 3.5 V − 120 180 nA Tamb = −10 to +60 °C −− 200 nA stop mode; pad RESET connected to VDD − 100 135 nA Motor output Vsat saturation voltage RM =2kΩ; Tamb = −10 to +60 °C; note 1 − 150 200 mV Zsc short-circuit impedance between motor pulses; Imotor <1mA − 200 300 Ω Oscillator Vstart starting voltage 1.1 −− V gm transconductance VOSCIN ≤ 50 mV (p-p) 5 10 −µS tosc start-up time − 0.3 0.9 s ∆f/f frequency stability ∆VDD = 100 mV − 0.05 0.20 ppm Cint integrated load capacitance 4.3 5.2 6.3 pF Rpar parasitic resistance allowed resistance between adjacent pads 20 −− M Ω |
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