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MJD253T4 Fiches technique(PDF) 2 Page - ON Semiconductor |
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MJD253T4 Fiches technique(HTML) 2 Page - ON Semiconductor |
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2 / 8 page ![]() MJD243 (NPN), MJD253 (PNP) http://onsemi.com 2 MAXIMUM RATINGS Rating Symbol Value Unit Collector−Base Voltage VCB 100 Vdc Collector−Emitter Voltage VCEO 100 Vdc Emitter−Base Voltage VEB 7.0 Vdc Collector Current−Continuous −Peak IC 4.0 8.0 Adc Base Current IB 1.0 Adc Total Device Dissipation @ TC = 25°C Derate above 25 °C PD 12.5 0.1 W W/ °C Total Device Dissipation @ TA = 25°C (Note 1) Derate above 25 °C PD 1.4 0.011 W W/ °C Operating and Storage Junction Temperature Range TJ, Tstg − 65 to + 150 °C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. When surface mounted on minimum pad sizes recommended. 25 25 Figure 1. Power Derating T, TEMPERATURE ( °C) 0 50 75 100 125 150 15 10 TC 5 20 2.5 0 1.5 1 TA 0.5 2 TC TA (SURFACE MOUNT) |
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