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KPC817 Fiches technique(PDF) 2 Page - KEC(Korea Electronics)

No de pièce KPC817
Description  SEMICONDUCTOR
PDF  4 Pages
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Fabricant  KEC [KEC(Korea Electronics)]
Site Internet  http://www.keccorp.com
Logo KEC - KEC(Korea Electronics)

KPC817 Fiches technique(HTML) 2 Page - KEC(Korea Electronics)

  KPC817 Datasheet HTML 1Page - KEC(Korea Electronics) KPC817 Datasheet HTML 2Page - KEC(Korea Electronics) KPC817 Datasheet HTML 3Page - KEC(Korea Electronics) KPC817 Datasheet HTML 4Page - KEC(Korea Electronics)  
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2016. 05. 30
2/4
KPC817 Series
Revision No : 2
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Input
Forward Current
IF
50
mA
Reverse Voltage
VR
6
V
Power Dissipation
PD
70
mW
Output
Collector Power Dissipation
PC
150
mW
Collector Current
IC
50
mA
Collector-Emitter Voltage
VCEO
80
V
Emitter-Collector Voltage
VECO
6
V
Total Power Dissipation
Ptot
200
mW
Isolation Voltage
VISO
5000
Vrms
Operating Temperature
Topr
-50
~110
Storage Temperature
Tstg
-55~125
Soldering Temperature
Tsol
260
ELECTRO-OPTICAL CHARACTERISTICS (Ta=25℃ unless otherwise noted)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Input
Forward
VF
IF=20mA
-
1.2
1.4
V
Reverse Current
IR
VR=4V
-
-
10
uA
Terminal Capacitance
Ct
V=0, f=1kHz
-
30
250
pF
Output
Collector Dark Current
ICEO
VCE=20V, IF=0
-
-
100
nA
Collector-Emitter Breakdown
Voltage
BVCEO
IC=0.1mA, IF=0
80
-
-
V
Emitter-Collector Breakdown
Voltage
BVECO
10uA, IF=0
6
-
-
V
Transfer
Characteristics
*Current Transfer Ratio
CTR
IF=5mA, VCE=5V
50
-
600
%
Collector-Emitter Saturation
Voltage
VCE(sat)
IF=20mA, IC=1mA
-
0.1
0.2
V
Isolation Resistance
RISO
DC500V, 40~60% R.H.
5
×1010 1×1011
-
Floating Capacitance
Cf
V=0, f=1MHz
-
0.6
1.0
pF
Cut-off Frequency
FC
VCE=5V, IC=2mA, RL=100Ω, -3dB
-
80
-
kHz
Rise Time
Tr
VCE=2V, IC=2mA, RL=100Ω
-
4
18
us
Fall Time
Tf
VCE=2V, IC=2mA, RL=100Ω
-
3
18
us
* CTR =
× 100%
IF
IC



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