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Moteur de recherche de fiches techniques de composants électroniques |
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Moteur de recherche de fiches techniques de composants électroniques |
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IRF7821 Fiches technique(PDF) 2 Page - International Rectifier |
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IRF7821 Fiches technique(HTML) 2 Page - International Rectifier |
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2 / 10 page  IRF7821 2 www.irf.com Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units BVDSS Drain-to-Source Breakdown Voltage 30 ––– ––– V ∆ΒV DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.025 ––– V/°C RDS(on) Static Drain-to-Source On-Resistance ––– 7.0 9.1 m Ω ––– 9.5 12.5 VGS(th) Gate Threshold Voltage 1.0 ––– ––– V ∆V GS(th) Gate Threshold Voltage Coefficient ––– - 4.9 ––– mV/°C IDSS Drain-to-Source Leakage Current ––– ––– 1.0 µA ––– ––– 150 IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA Gate-to-Source Reverse Leakage ––– ––– -100 gfs Forward Transconductance 22 ––– ––– S Qg Total Gate Charge ––– 9.3 14 Qgs1 Pre-Vth Gate-to-Source Charge ––– 2.5 ––– Qgs2 Post-Vth Gate-to-Source Charge ––– 0.8 ––– nC Qgd Gate-to-Drain Charge ––– 2.9 ––– Qgodr Gate Charge Overdrive ––– 3.1 ––– See Fig. 16 Qsw Switch Charge (Qgs2 + Qgd) ––– 3.7 ––– Qoss Output Charge ––– 6.1 ––– nC td(on) Turn-On Delay Time ––– 6.3 ––– tr Rise Time ––– 2.7 ––– td(off) Turn-Off Delay Time ––– 9.7 ––– ns tf Fall Time ––– 7.3 ––– Ciss Input Capacitance ––– 1010 ––– Coss Output Capacitance ––– 360 ––– pF Crss Reverse Transfer Capacitance ––– 110 ––– Avalanche Characteristics Parameter Units EAS Single Pulse Avalanche Energy dh mJ IAR Avalanche Current A Diode Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current ––– ––– 3.1 (Body Diode) A ISM Pulsed Source Current ––– ––– 100 (Body Diode) Ãh VSD Diode Forward Voltage ––– ––– 1.0 V trr Reverse Recovery Time ––– 28 42 ns Qrr Reverse Recovery Charge ––– 23 35 nC ––– ID = 10A VGS = 0V VDS = 15V VGS = 4.5V, ID = 10A e VGS = 4.5V Typ. ––– VDS = VGS, ID = 250µA Clamped Inductive Load VDS = 15V, ID = 10A TJ = 25°C, IF = 10A, VDD = 10V di/dt = 100A/µs e TJ = 25°C, IS = 10A, VGS = 0V e showing the integral reverse p-n junction diode. MOSFET symbol VDS = 10V, VGS = 0V VDD = 15V, VGS = 4.5V e ID = 10A VDS = 15V VGS = 20V VGS = -20V VDS = 24V, VGS = 0V VDS = 24V, VGS = 0V, TJ = 125°C Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 1mA VGS = 10V, ID = 13A e Conditions Max. 44 10 ƒ = 1.0MHz |
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