BUL742 datasheet(1/5 Pages) STMICROELECTRONICS

No de pièce	BUL742

Description	HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

PDF	5 Pages

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Fabricant	STMICROELECTRONICS [STMicroelectronics]

Site Internet	http://www.st.com

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BUL742

HIGH VOLTAGE FAST-SWITCHING

NPN POWER TRANSISTOR

s

HIGH VOLTAGE CAPABILITY

s

LOW SPREAD OF DYNAMIC PARAMETERS

s

MINIMUM LOT-TO-LOT SPREAD FOR

RELIABLE OPERATION

s

VERY HIGH SWITCHING SPEED

s

LARGE RBSOA

APPLICATIONS

s

ELECTRONIC BALLAST FOR

FLUORESCENT LIGHTING

s

SWITCH MODE POWER SUPPLIES

DESCRIPTION

The BUL742 is manufactured using high voltage

Multi

Epitaxial

Planar

technology

for

high

switching speeds and high voltage capability.

It uses a Cellular Emitter structure with planar

edge termination to enhance switching speeds

while maintening the wide RBSOA.

Thanks to an increased intermediate layer, it has

an

intrinsic

ruggedness

which

enables

the

transistor to withstand an high collector current

level during breakdown condition, without using

the transil protection usually necessary in typical

converters for lamp ballast.

®

INTERNAL SCHEMATIC DIAGRAM

June 2001

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

VCES

Collector-Emitter Voltage (VBE = 0)

900

V

VCEO

Collector-Emitter Voltage (IB = 0)

400

V

VEBO

Emitter-Base Voltage

(IC = 0,

IB = 0.75 A,

tp < 10

µs, Tj < 150oC)

BVEBO

V

IC

Collector Current

4

A

ICM

Collector Peak Current (tp <5 ms)

8

A

IB

Base Current

2

A

IBM

Base Peak Current (tp <5 ms)

4

A

Ptot

Total Dissipation at Tc = 25

oC70

W

Tstg

Storage Temperature

-65 to 150

oC

Tj

Max. Operating Junction Temperature

150

oC

1

2

3

TO-220

1/5

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