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US3JB Fiches technique(PDF) 2 Page - Diode Semiconductor Korea |
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US3JB Fiches technique(HTML) 2 Page - Diode Semiconductor Korea |
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2 / 2 page ![]() 0.4 0.001 0.01 0.1 1 0.6 0.8 1.0 1.2 1.4 1.6 1.8 10 PULSE WIDTH=300μ s1%DUTY CYCLE TJ =25 US3AB-US3GB US3JB-US3MB 0 0 RES IST IVE OR INDUCTIVE LO A D 25 50 75 1 00 1 25 1 50 1.5 2.5 2.0 0.5 0.2X 0.2"(5.0X 5.0m m ) COPPER PA D ARE A S 1.0 3.0 0 1 10 100 50 100 TL=110℃ 8.3ms SINGLE HALF SINE-WAVE (JEDEC METHOD) 0 0.1 10 20 40 60 80 100 0.01 TJ=125℃ 125℃ 100℃ 25℃ 1 100 0.1 1 10 0.01 0.1 1 10 100 100 REVERSE VOLTAGE(V) FIG.2 -- MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT LEAD TEMPERATURE ℃ NUMBER OF CYCLES AT 60HZ INSTANTANEOUS FORWARD VOLTAGE(V) FIG.6 -- TYPICAL TRANSIENT THERMAL IMPEDANCE PERCENT OF RATED PEAK REVERSE VOLTAGE.( %) T,PULSE DURATION, US3AB---US3MB FIG.3 -- TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS FIG.4 -- TYPICAL REVERSE CHARACTERISTICS FIG.5 -- TYPICAL JUNCTION CAPACITANCE FIG.1 -- FORWARD CURRENT DERATING CURVE TJ=25 1 2 4 6 10 20 40 60 100 200 0.1 0.2 0.4 1 2 4 10 40 100 20 US3KB,US3MB US3AB-US3JB Diode Semiconductor Korea www.diode.kr |
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