MCP1406-ESLASHAT datasheet(4/30 Pages) MICROCHIP

4 / 30 page

MCP1406/07

DS20002019C-page 4

 2006-2016 Microchip Technology Inc.

1.0

ELECTRICAL

CHARACTERISTICS

Absolute Maximum Ratings †

Supply Voltage ................................................................+20V

Input Voltage ..................................(VDD +0.3V) to (GND -5V)

Input Current (VIN > VDD) ..............................................50 mA

Package Power Dissipation (TA <= +70°C)

DFN-S .......................................................................2.5W

PDIP..........................................................................1.2W

SOIC .......................................................................0.83W

TO-220 ......................................................................3.9W

ESD Protection on all Pins ................2 kV (HBM), 400V (MM)

† Notice: Stresses above those listed under “Maximum

Ratings” may cause permanent damage to the device.

This is a stress rating only and functional operation of

the device at those or any other conditions above those

indicated

the

operational

sections

this

specification is not intended. Exposure to maximum

rating conditions for extended periods may affect

device reliability.

DC CHARACTERISTICS

Electrical Specifications: Unless otherwise indicated, TA = +25°C, with 4.5VVDD18V.

Parameters

Sym.

Min.

Typ.

Max.

Units

Conditions

Input

Logic ‘1’, High Input Voltage

VIH

2.4

1.8

—

Logic ‘0’, Low Input Voltage

VIL

—1.3

0.8

Input Current

IIN

–10

—

µA

VINVDD

Input Voltage

VIN

-5

—

VDD +0.3

Output

High Output Voltage

VOH

VDD – 0.025

—

DC Test

Low Output Voltage

VOL

—

0.025

DC Test

Output Resistance, High

ROH

—2.1

2.8



IOUT = 10 mA, VDD = 18V

Output Resistance, Low

ROL

—1.5

2.5



IOUT = 10 mA, VDD = 18V

Peak Output Current

IPK

—6

—

VDD  18V (Note 1)

Continuous Output Current

IDC

1.3

Note 1, Note 2

Latch-Up Protection Withstand

Reverse Current

IREV

—

1.5

—

Duty cycle

2%, t 300 µs

Switching Time (Note 3)

Rise Time

—20

Figure 4-1, Figure 4-2

CL = 2500 pF

Fall Time

—20

Figure 4-1, Figure 4-2

CL = 2500 pF

Delay Time

tD1

—40

Figure 4-1, Figure 4-2

Delay Time

tD2

—40

Figure 4-1, Figure 4-2

Power Supply

Supply Voltage

VDD

4.5

—

18.0

Power Supply Current

—

130

250

µA

VIN = 3V

—

100

µA

VIN = 0V

Note 1: Tested during characterization, not production tested.

2: Valid for AT (TO-220) and MF (DFN-S) packages only. TA = +25°C

3: Switching times ensured by design.

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