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Moteur de recherche de fiches techniques de composants électroniques |
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Moteur de recherche de fiches techniques de composants électroniques |
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SD101BWS Fiches technique(PDF) 2 Page - Diode Semiconductor Korea |
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SD101BWS Fiches technique(HTML) 2 Page - Diode Semiconductor Korea |
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2 / 3 page  Schottky Barrier Diode SD101AWS/SD101BWS/SD101CWS ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Min. Typ. Max. Unit Conditions Reverse Breakdown Voltage SD101AW SD101BW SD101CW V(BR)R 60 50 40 V IR=10μA IR=10μA IR=10μA Forward voltage SD101AW SD101BW SD101CW SD101AW SD101BW SD101CW VF 0.41 0.40 0.39 1.00 0.95 0.90 V IF=1.0mA IF=1.0mA IF=1.0mA IF=15mA IF=15mA IF=15mA Reverse current SD101AW SD101BW SD101CW IRM 0.2 μA VR=50V VR=40V VR=30V Capacitance between terminals SD101AW SD101BW SD101CW CT 2.0 2.1 2.2 pF VR=0,f=1MHz Reverse Recovery Time trr 1.0 ns IR=IF=5mA Irr=0.1*IR,RL=100Ω TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified www.diode.kr Diode Semiconductor Korea |
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