2SA1012 datasheet(2/5 Pages) BWTECH

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2SA1012

Plastic-Encapsulate Transistors (PNP)

Publication Order Number: [2SA1012]

ELECTRICAL CHARACTERISTICS @ Ta=25°C unless otherwise specified

Symbol

Parameter

Test Conditions

MIN

TYP

MAX

UNIT

V(BR)CBO

Collector-base breakdown voltage

IC = -0.1mA , IE = 0

-60

V(BR)CEO*

Collector-emitter breakdown voltage

IC = -10mA , IB = 0

-50

V(BR)EBO

Emitter-base breakdown voltage

IE = -10μA , IC = 0

-5

ICBO

Collector cut-off current

VCB = -50 V , IE = 0

-1

μA

IEBO

Emitter cut-off current

VEB = -5 V , IC = 0

-1

μA

hFE(1)

DC current gain

VCE = -1 V , IC = -1 A

240

hFE(2)*

VCE = -1 V , IC = -3 A

VCE(sat)*

Collector-emitter saturation voltage

IC = -3 A , IB = -150mA

-0.4

VBE(sat)*

Base-emitter saturation voltage

IC = -3 A , IB = -150mA

1.2

Transition frequency

VCE = -4 V , IC = -1 A

MHz

Cob

Collector output capacitance

VCB = -10 V , IE = 0

f = 1.0MHz

170

ton

Turn-on Time

VCC = -30 V, IC = -3 A

IB1 = -IB2 = -0.15 A

0.1

μs

Storage time

1.0

Fall time

0.1

*Pulse test: tp≤300μs, δ≤0.02.

CLASSIFICATION of hFE(1)

Rank

Range

70-140

120-240

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