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Moteur de recherche de fiches techniques de composants électroniques |
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Moteur de recherche de fiches techniques de composants électroniques |
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BAV23 Fiches technique(PDF) 2 Page - Diode Semiconductor Korea |
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BAV23 Fiches technique(HTML) 2 Page - Diode Semiconductor Korea |
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2 / 4 page  Surface mount switching diode BAV23 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Characteristic Symbol Min Typ MAX UNIT Test Condition Reverse Breakdown Voltage V(BR)R 200 - - V IR= 100μA Forward Voltage VF - - 1.0 1.25 V IF=100mA IF=200mA Forward Voltage series connection VF - - 2.0 2.5 V IF=100mA IF=200mA Reverse Leakage Current IR - - 100 100 nA μA VR=200V VR=200V,Tj=150℃ Reverse Leakage Current series connection IR - - 100 100 nA μA VR=400V VR=400V,Tj=150℃ Diodes Capacitance series connection Cd - - 5 2.5 pF VR=0V,f=1.0MHz Reverse Recovery Time trr - - 50 ns IF=IR=10mA,Irr=0.1*IR TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified www.diode.kr Diode Semiconductor Korea |
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