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BUW51 Fiches technique(PDF) 1 Page - Inchange Semiconductor Company Limited

No de pièce BUW51
Description  isc Silicon NPN Power Transistor
PDF  2 Pages
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Fabricant  ISC [Inchange Semiconductor Company Limited]
Site Internet  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BUW51 Fiches technique(HTML) 1 Page - Inchange Semiconductor Company Limited

  BUW51 Datasheet HTML 1Page - Inchange Semiconductor Company Limited BUW51 Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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INCHANGE Semiconductor
isc Product Specification
isc website：www.iscsemi.cn
1
isc Silicon NPN Power Transistor
BUW51
DESCRIPTION
·High Current Capability
·Fast Switching Speed
·Low Saturation Voltage and High Gain
APPLICATIONS
·Designed for use in general purpose power amplifier
applications.
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCEV
Collector-Emitter Voltage
(VBE= -1.5V)
300
V
VCEO
Collector-Emitter Voltage
200
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
20
A
ICM
Collector Current-Peak
28
A
IB
Base Current-Continuous
4
A
IBM
Base Current-peak
7
A
PC
Collector Power Dissipation
@TC=25℃
150
W
Tj
Junction Temperature
175
℃
Tstg
Storage Temperature Range
-65~175
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
1.0
℃/W


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