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BUV52 Fiches technique(PDF) 1 Page - Inchange Semiconductor Company Limited

No de pièce BUV52
Description  isc Silicon NPN Power Transistor
PDF  2 Pages
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Fabricant  ISC [Inchange Semiconductor Company Limited]
Site Internet  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BUV52 Fiches technique(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc website：www.iscsemi.cn
1
isc Silicon NPN Power Transistor
BUV52
DESCRIPTION
·High Current Capability
·Low Collector Saturation Voltage-
: VCE(sat)= 0.8V (Max.) @IC= 4A
·High Switching Speed
APPLICATIONS
·Designed for high current, high speed, high power
applications.
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCEV
Collector-Emitter Voltage
(VBE= -1.5V)
350
V
VCEO
Collector-Emitter Voltage
250
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
20
A
ICM
Collector Current-Peak
30
A
IB
Base Current-Continuous
4
A
IBM
Base Current-peak
6
A
PC
Collector Power Dissipation
@TC=25℃
150
W
Tj
Junction Temperature
200
℃
Tstg
Storage Temperature Range
-65~200
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
1.17
℃/W


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