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T06 Fiches technique(PDF) 1 Page - Inchange Semiconductor Company Limited |
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T06 Fiches technique(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 3 page ![]() INCHANGE Semiconductor isc Product Specification isc Website:www.iscsemi.cn isc Silicon NPN Power Transistor T06 DESCRIPTION · High Voltage: VCBO= 400V(Min.) · Fast Switching Speed- : tf= 750ns(Max) · Low Collector Saturation Voltage- : VCE(sat)= 1.0V(Max)@ IC= 5A APPLICATIONS · Switching for dynamotor excitation · For use in horizontal deflection output stage of TV’s and CTV’s circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 7 A ICM Collector Current-Peak 10 A IB Base Current 4 A PC Collector Power Dissipation @ TC=25℃ 60 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 2.08 ℃ /W |
Numéro de pièce similaire - T06 |
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Description similaire - T06 |
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