BUX41N datasheet(2/2 Pages) ISC

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INCHANGE Semiconductor

isc Product Specification

isc website：www.iscsemi.cn

isc Silicon NPN Power Transistor

BUX41N

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

VCEO(SUS)

Collector-Emitter Sustaining Voltage

IC= 200mA ; IB= 0, L= 25mH

160

V(BR)EBO

Emitter-Base Breakdown Voltage

IE=50mA; IC= 0

VCE(sat)-1

Collector-Emitter Saturation Voltage

IC=8A; IB=0.8A

1.2

VCE(sat)-2

Collector-Emitter Saturation Voltage

IC=12A; IB=1.5A

1.6

VBE(sat)

Base-Emitter Saturation Voltage

IC=12A; IB=1.5A

2.0

ICEO

Collector Cutoff Current

VCE=130V; IB= 0

1.0

ICEX

Collector Cutoff Current

VCE= 220V; VBE= -1.5V

VCE= 220V; VBE= -1.5V; TC= 125℃

1.0

5.0

IEBO

Emitter Cutoff Current

VEB= 5V; IC=0

1.0

hFE-1

DC Current Gain

IC= 8A ; VCE= 4V

hFE-2

DC Current Gain

IC= 12A ; VCE= 4V

Current-Gain—Bandwidth Product

IC= 1A ; VCE= 15V; f=10MHz

MHz

Switching Times; Resistive Laod

ton

Turn-on Time

IC= 12A ;IB1= -IB2= 1.5A;

VCC= 30V;

RB= 3.9Ω; RC= 2.5Ω

1.3

μs

Storage Time

1.5

μs

Fall Time

0.8

μs

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