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IRFS840A Fiches technique(PDF) 1 Page - Inchange Semiconductor Company Limited

No de pièce IRFS840A
Description  isc Silicon NPN Power Transistor
PDF  2 Pages
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Fabricant  ISC [Inchange Semiconductor Company Limited]
Site Internet  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

IRFS840A Fiches technique(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc website：www.iscsemi.cn
isc & iscsemi is registered trademark
1
isc N-Channel MOSFET Transistor
IRFS840A
FEATURES
·Avalanche Rugged Technology
·Rugged Gate Oxide Technology
·Lower Input Capacitance
·Improved Gate Charge
·Extended Safe Operating Area
DESCRIPTION
·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
500
V
VGS
Gate-Source Voltage-Continuous
±20
V
ID
Drain Current-Continuous
4.6
A
IDM
Drain Current-Single Pluse
32
A
PD
Total Dissipation @TC=25℃
44
W
TJ
Max. Operating Junction Temperature
-55~150
℃
Tstg
Storage Temperature
-55~150
℃
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance, Junction to Case
2.86
℃/W
Rth j-a
Thermal Resistance, Junction to Ambient
62.5
℃/W
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