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IRF450 Fiches technique(PDF) 1 Page - Inchange Semiconductor Company Limited |
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IRF450 Fiches technique(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc website:www.iscsemi.cn isc & iscsemi is registered trademark 1 isc N-Channel MOSFET Transistor IRF450 DESCRIPTION ·13A,500V ·RDS(on)=0.4Ω ·SOA is Power Dissipation Limited ·Linear Transfer Characteristics ·Related Literature APPLICATIONS ·Designed for applications such as switching regulators, switching convertors ,motor drivers ,relay driver ,and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 500 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25℃ 13 A Ptot Total Dissipation@TC=25℃ 125 W Tj Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 0.83 ℃/W Rth j-A Thermal Resistance,Junction to Ambient 30 ℃/W PDF pdfFactory Pro www.fineprint.cn |
Numéro de pièce similaire - IRF450 |
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Description similaire - IRF450 |
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