XL0840 datasheet(3/5 Pages) STMICROELECTRONICS

3 / 5 page

XL0840

3/5

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

100

125

Tamb(°C)

α=180°

D.C.

IT(av)(A)

Fig. 2-2: Average and D.C. on-state current ver-

sus ambient temperature (device mounted on FR4

with recommended pad layout).

1.E-02

1.E-01

1.E+00

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03

tp(s)

K=[Zth(j-a)/Rth(j-a)]

Fig. 3: Relative variation of thermal impedance

junction to ambient versus pulse duration.

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

0.00

0.05

0.10

0.15

0.20

0.25

0.30

0.35

0.40

0.45

0.50

IT(av)(A)

α=180°

P(W)

180°

Fig. 1: Maximum average power dissipation ver-

sus average on-state current.

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

100

125

Tlead(°C)

α=180°

D.C.

IT(av)(A)

Fig. 2-1: Average and D.C. on-state current ver-

sus lead temperature.

0.01

0.10

1.00

10.00

Rgk(k )

Ω

Tj=25°C

IH [Rgk] / IH [Rgk=1k ]

Ω

Fig. 5: Relative variation of holding current versus

gate-cathode resistance (typical values).

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

-40 -30 -20 -10

20 30

60 70

90 100 110 120 130

Tj(°C)

IGT

IH & IL

(Rgk=1kW)

IGT, IH, IL[Tj] / IGT, IH, IL [Tj=25°C]

Fig. 4: Relative variation of gate trigger current,

holding current and latching current versus junc-

tion temperature (typical values).

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