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CPC7556 Fiches technique(PDF) 3 Page - IXYS Corporation |
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CPC7556 Fiches technique(HTML) 3 Page - IXYS Corporation |
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3 / 6 page ![]() INTEGRATED CIRCUITS DIVISION 3 www.ixysic.com R04 CPC7556 1.4 Recommended Operating Conditions 1.5 General Conditions Typical values are characteristic of the device at 25 C and are the result of engineering evaluations. They are provided for information purposes only and are not part of the manufacturing testing requirements. Unless otherwise noted, all electrical specifications are listed for TA=25C. 1.6 DC Electrical Characteristics Parameter Symbol Minimum Maximum Units Diode Forward Current (Average) IF - 240 mArms Reverse Voltage VR - 100 V Operating Temperature Range TA -40 +125 C Thermal Impedance JA 120 - C/W Parameter Conditions Symbol Minimum Typical Maximum Units Diode Bridge Characteristics: Forward Current - IF - - 240 mArms Diode Forward Voltage Drop IF = 40mA VF 0.83 0.91 0.97 V IF = 250mA 1 1.3 1.49 Reverse Voltage Leakage Current VR = 100V IR -- 1 A Thyrister Characteristics: Gate Trigger Current V+/ = VAK = 10V, IAK = 110mA IGT 0.5 1.2 1.8 mA Gate Trigger Voltage VGK 2.5 2.8 3.2 V Trigger Current - IAKT -25 40 mA Hold Current - IH 70 100 - mA Peak Off State Voltage VGK = 0V, IAK = 5 uA VDRM 110 - - V |
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