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BUY78 Fiches technique(PDF) 2 Page - Inchange Semiconductor Company Limited |
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BUY78 Fiches technique(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc website:www.iscsemi.cn 2 isc Silicon NPN Power Transistors BUY78 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 0.1A; IB= 0 300 V V(BR)CES Collector-Emitter Breakdown Voltage IC= 1mA; IE= 0 600 V V(BR)CEV Collector-Emitter Breakdown Voltage IC= 1mA; VBE= -3.5V 600 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 7 V VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1.25A 1.4 V VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 1.25A 1.7 V ICBO Collector Cutoff Current VCB= 400V; IE= 0 1.0 mA ICES Collector Cutoff Current VCE= 400V; VBE= 0; TC= 150℃ 15 mA hFE DC Current Gain IC= 5A; VCE= 1.5V 5 fT Current-Gain—Bandwidth Product IC= 0.5A; VCE= 10V 15 MHz tf Fall Time IC= 3A; IB1= -IB2= 0.6A 1.0 μs |
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