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BUY73 Fiches technique(PDF) 1 Page - Inchange Semiconductor Company Limited |
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BUY73 Fiches technique(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc website:www.iscsemi.cn 1 isc Silicon NPN Power Transistor BUY73 DESCRIPTION · ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min.) ·Low Collector Saturation Voltage- : VCE(sat)= 1.4V@ IC= 10A APPLICATIONS ·Designed for general switching applications at higher outputs. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 280 V VCES Collector-Emitter Voltage 280 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 15 A ICM Collector Current-Peak 25 A IB Base Current-Continuous 5 A PC Collector Power Dissipation @TC≤25℃ 117 W Tj Junction Temperature 175 ℃ Tstg Storage Temperature Range -65~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.28 ℃/W |
Numéro de pièce similaire - BUY73 |
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Description similaire - BUY73 |
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