© 2000 IXYS All rights reserved

1 - 2

V

RSM

V

x V

RRM

Anode

Cathode

V

V

V

on stud

on stud

900

-

800

DS 17-08A

DSI 17-08A

1300

-

1200

DS 17-12A

DSI 17-12A

1300

1300

1200

DSA 17-12A

DSAI 17-12A

1700

1750

1600

DSA 17-16A

DSAI 17-16A

1900

1950

1800

DSA 17-18A

DSAI 17-18A

x Only for Avalanche Diodes

Symbol

Test Conditions

Maximum Ratings

I

F(RMS)

T

VJ

= T

VJM

40

A

I

F(AV)M

T

25

A

P

RSM

DSA(I) types, T

kW

I

FSM

T

VJ

= 45

°C;

t = 10 ms (50 Hz), sine

370

A

V

R

= 0

t = 8.3 ms (60 Hz), sine

400

A

T

VJ

= T

VJM

t = 10 ms (50 Hz), sine

300

A

V

R

= 0

t = 8.3 ms (60 Hz), sine

320

A

T

VJ

= 45

°C

t = 10 ms (50 Hz), sine

680

V

R

= 0

t = 8.3 ms (60 Hz), sine

660

T

VJ

= T

VJM

t = 10 ms (50 Hz), sine

450

V

R

= 0

t = 8.3 ms (60 Hz), sine

430

T

VJ

-40...+180

°C

T

VJM

180

°C

T

stg

-40...+180

°C

M

d

Mounting torque

2.2-2.8

Nm

19-25

lb.in.

Weight

6g

V

RRM

= 800-1800 V

I

I

Features

q

International standard package,

JEDEC DO-203 AA (DO-4)

q

Planar glassivated chips

Applications

q

Supplies for DC power equipment

q

DC supply for PWM inverter

q

Field supply for DC motors

q

Battery DC power supplies

Advantages

q

Space and weight savings

q

Simple mounting

q

Improved temperature and power

cycling

q

Reduced protection circuits

Symbol

Test Conditions

Characteristic Values

I

R

T

VJ

= T

£

4mA

V

F

I

F

= 55 A; T

£

1.36

V

V

T0

For power-loss calculations only

0.85

V

r

T

T

VJ

= T

VJM

8m

W

R

thJC

DC current

1.5

K/W

R

thJH

DC current

2.1

K/W

d

S

Creepage distance on surface

2.05

mm

d

A

Strike distance through air

2.05

mm

a

Max. allowable acceleration

100

Dimensions in mm (1 mm = 0.0394")

Data according to IEC 60747

IXYS reserves the right to change limits, test conditions and dimensions

DS

17

DSI

17

DSA 17

DSAI 17

Rectifier Diode

Avalanche Diode

A = Anode

C = Cathode

DO-203 AA

10-32UNF

DS

DSI

DSA

DSAI

C

A

A

C