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BUY24 Fiches technique(PDF) 2 Page - Inchange Semiconductor Company Limited |
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BUY24 Fiches technique(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc website:www.iscsemi.cn 2 isc Silicon NPN Power Transistor BUY24 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0 60 V V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 120 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1m A; IC= 0 6 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A 0.6 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A 1.0 V VBE(sat)-1 Base-Emitter Saturation Voltage IC= 2A; IB= 0.2A 1.2 V VBE(sat)-2 Base-Emitter Saturation Voltage IC= 5A; IB= 0.5A 1.3 V ICBO Collector Cutoff Current VCB=60V; IE= 0 VCB=60V; IE= 0; TC= 125℃ 10 1.0 μA mA hFE-1 DC Current Gain IC= 0.5A ; VCE= 2V 45 hFE-2 DC Current Gain IC= 2A; VCE= 2V 40 hFE-3 DC Current Gain IC= 5A; VCE= 2V 40 fT Current-Gain—Bandwidth Product IC= 0.5A; VCE= 5V 100 MHz COB Collector Output Capacitance IE= 0; VCB= 10V 35 pF Switching Times ton Turn-On Time IC= 5A; IB1= 0.5A 0.35 μs toff Turn-Off Time IC= 5A; IB1= -IB2= 0.5A 0.65 μs |
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