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MMBT2907 Fiches technique(PDF) 4 Page - Comchip Technology

No de pièce MMBT2907
Description  General Purpose Transistor (PNP)
PDF  5 Pages
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Fabricant  COMCHIP [Comchip Technology]
Site Internet  http://www.comchiptech.com
Logo COMCHIP - Comchip Technology

MMBT2907 Fiches technique(HTML) 4 Page - Comchip Technology

  MMBT2907 Datasheet HTML 1Page - Comchip Technology MMBT2907 Datasheet HTML 2Page - Comchip Technology MMBT2907 Datasheet HTML 3Page - Comchip Technology MMBT2907 Datasheet HTML 4Page - Comchip Technology MMBT2907 Datasheet HTML 5Page - Comchip Technology  
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www.comchip
tech.com
COMCHIP
General Purpose Transistor (PNP)
TYPICAL CHARACTERISTICS
Figure 3. DC Current Gain
IC, Collector Current (mA)
0.3
0.5
0.7
1.0
3.0
0.2
–0.1
TJ = 125°C
25
°C
–55
°C
VCE = –1.0 V
VCE = –10 V
2.0
–0.2
–0.3
–0.5 –0.7
–1.0
–2.0
–3.0
–5.0 –7.0
–10
–20
–30
–50 –70
–100
–200
–300
–500
Figure 4. Collector Saturation Region
IB, Base Current (mA)
–0.4
–0.6
–0.8
–1.0
–0.2
0
IC = –1.0 mA
–0.005
–10 mA
–0.01
–100 mA
–500 mA
–0.02 –0.03 –0.05 –0.07 –0.1
–0.2
–0.3
–0.5 –0.7 –1.0
–2.0
–3.0
–5.0 –7.0 –10
–20
–30
–50
Figure 5. Turn–On Time
IC, Collector Current
300
–5.0
Figure 6. Turn–Off Time
IC, Collector Current (mA)
–5.0
200
100
70
50
30
20
10
7.0
5.0
3.0
–7.0 –10
–20 –30
–50 –70 –100
–200 –300
–500
tr
2.0 V
td @ VBE(off) = 0 V
VCC = –30 V
IC/IB = 10
TJ = 25°C
500
300
100
70
50
30
20
10
7.0
5.0
–7.0 –10
–20 –30
–50 –70 –100
–200 –300 –500
200
tf
t
′s = ts – 1/8 tf
VCC = –30 V
IC/IB = 10
IB1 = IB2
TJ = 25°C
Page 4
MDS030300
MDS030300B1



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