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BD950 Fiches technique(PDF) 2 Page - Inchange Semiconductor Company Limited

No de pièce BD950
Description  Collector-Emitter Breakdown Voltage-: V(BR)CEO= -60V(Min)
PDF  2 Pages
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Fabricant  ISC [Inchange Semiconductor Company Limited]
Site Internet  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BD950 Fiches technique(HTML) 2 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc website：www.iscsemi.cn
2
isc Silicon PNP Power Transistor
BD950
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC= -1mA ; IB= 0
-60
V
V(BR)CBO
Collector-Base Breakdown Voltage
IC= -1mA ; IE= 0
-60
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE= -1mA ; IC= 0
-5
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= -2A; IB= -0.2A
-1.0
V
VBE(on)
Base-Emitter On Voltage
IC= -2A; VCE= -4V
-1.4
V
ICBO
Collector Cutoff Current
VCB= -60V; IE= 0
-50
μA
VCB= -30V; IE= 0,TJ=150℃
-1.0
mA
ICEO
Collector Cutoff Current
VCE= -30V; IB= 0
-0.1
mA
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
-0.2
mA
hFE-1
DC Current Gain
IC= -500mA ; VCE= -4V
40
hFE-2
DC Current Gain
IC= -2A ; VCE= -4V
20
fT
Current-Gain—Bandwidth Product
IC= -500mA ; VCE= -4V
3
MHz
Switching Times
ton
Turn-On Time
IC= -1.0A; IB1= -IB2= -0.1A;
VCC= -20V; RL= 20Ω
0.1
μs
toff
Turn-Off Time
0.4
μs



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