3DD7F datasheet(1/2 Pages) ISC

No de pièce	3DD7F

Description	Collector-Emitter Breakdown Voltage-: V(BR)CEO= 300V(Min)

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Fabricant	ISC [Inchange Semiconductor Company Limited]

Site Internet	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc website：www.iscsemi.cn

1

isc Silicon NPN Power Transistor

3DD7F

DESCRIPTION

·Collector-Emitter Breakdown Voltage-

: V(BR)CEO= 300V(Min)

·Collector-Emitter Saturation Voltage-

: VCE(sat)= 1.2V(Max) @IC= 3.75A

APPLICATIONS

·Designed for power amplifier, low speed switching and

regulated power supply applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

400

V

VCEO

Collector-Emitter Voltage

300

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current-Continuous

7.5

A

PC

Collector Power Dissipation

@ TC=75℃

75

W

TJ

Junction Temperature

175

℃

Tstg

Storage Temperature Range

-55~175

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

1.33

℃/W

Numéro de pièce similaire - 3DD7F

Fabricant	No de pièce	Fiches technique	Description
Inchange Semiconductor ...	3DD7A	191Kb / 2P	Collector-Emitter Breakdown Voltage-: V(BR)CEO= 50V(Min)
	3DD7B	191Kb / 2P	Collector-Emitter Breakdown Voltage-: V(BR)CEO= 100V(Min)
	3DD7C	191Kb / 2P	Collector-Emitter Breakdown Voltage-: V(BR)CEO= 150V(Min)
	3DD7D	143Kb / 3P	Silicon NPN Power Transistors
	3DD7E	191Kb / 2P	Collector-Emitter Breakdown Voltage-: V(BR)CEO= 250V(Min)

More results

Description similaire - 3DD7F

Fabricant	No de pièce	Fiches technique	Description
Inchange Semiconductor ...	2SA1080	98Kb / 2P	Collector-Emitter Breakdown Voltage- : V(BR)CEO= -40V(Min.)
	2SA505	108Kb / 2P	Collector-Emitter Breakdown Voltage- V(BR)CEO= -50V (Min.)
	2SA652	82Kb / 2P	Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min.)
	2SB526	109Kb / 2P	Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min)
	3DD101A	191Kb / 2P	Collector-Emitter Breakdown Voltage-: V(BR)CEO= 100V(Min.)
	3DD325	195Kb / 2P	Collector-Emitter Breakdown Voltage-: V(BR)CEO= 50V(Min)
	3DD8B	190Kb / 2P	Collector-Emitter Breakdown Voltage-: V(BR)CEO= 50V(Min)
	BUY55	192Kb / 2P	Collector-Emitter Breakdown Voltage-: V(BR)CEO= 125V(Min.)
	BUY77	194Kb / 2P	Collector-Emitter Breakdown Voltage-: V(BR)CEO = 250V(Min.)
	BUY78	194Kb / 2P	Collector-Emitter Breakdown Voltage-: V(BR)CEO = 300V(Min.)

More results

3DD7F Fiches technique(PDF) 1 Page - Inchange Semiconductor Company Limited

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