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2SD1314 Fiches technique(PDF) 1 Page - Inchange Semiconductor Company Limited

No de pièce 2SD1314
Description  High Power Dissipation
PDF  2 Pages
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Fabricant  ISC [Inchange Semiconductor Company Limited]
Site Internet  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2SD1314 Fiches technique(HTML) 1 Page - Inchange Semiconductor Company Limited

  2SD1314 Datasheet HTML 1Page - Inchange Semiconductor Company Limited 2SD1314 Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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INCHANGE Semiconductor
isc Product Specification
isc website：www.iscsemi.cn
1
isc Silicon NPN Power Transistor
2SD1313
DESCRIPTION
·
High Power Dissipation
·
High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 350V(Min)
·
High Speed Switching
·
Low Collector Saturation Voltage
APPLICATIONS
·
High power amplifier applications.
·
High power switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
800
V
VCEO
Collector-Emitter Voltage
350
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
25
A
ICM
Collector Current-Pulse
35
A
IB
Base Current-Continuous
10
A
IBM
Base Current- Pulse us
15
A
PC
Collector Power Dissipation
@ TC=25℃
200
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150
℃


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