| Moteur de recherche de fiches techniques de composants électroniques |
|
2SC5900 Fiches technique(PDF) 2 Page - Inchange Semiconductor Company Limited |
|
|
|||||||||||||||||||||||||||||
2SC5900 Fiches technique(HTML) 2 Page - Inchange Semiconductor Company Limited |
|
2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc website:www.iscsemi.cn 2 isc Silicon NPN Power Transistor 2SC5900 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; IB= 0 800 V VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 1A 3.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB= 1A 1.5 V ICBO Collector Cutoff Current VCB= 800V ; IE= 0 10 μA ICES Collector Cutoff Current VCE= 1700V ; RBE= 0 1.0 mA IEBO Emitter Cutoff Current VEB= 4V ; IC= 0 10 mA hFE-1 DC Current Gain IC= 1A ; VCE= 5V 10 hFE-2 DC Current Gain IC=4.5A ; VCE= 5V 4 9 tstg Storage Time IC= 3A ;IB1=0.5A; IB2= -1.5A 3.0 μs tf Fall Time IC= 3A ;IB1=0.5A; IB2= -1.5A 0.2 μs |
|
|
Lien URL |
| ALLDATASHEET vous a-t-il été utile ? [ DONATE ] |
À propos de Alldatasheet | Publicité | Contactez-nous | Politique de confidentialité | Lien vers la fiche technique | Echange de liens | Fabricants All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |