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2SC5353 Fiches technique(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SC5353 Fiches technique(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() INCHANGE Semiconductor isc Product Specification 1 isc website:www.iscsemi.cn isc Silicon NPN Power Transistor 2SC5353 DESCRIPTION ·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 800V(Min.) ·Low Collector Saturation Voltage : VCE(sat) =1V(Max) @ IC= 1.2A APPLICATIONS ·Designed for use in lighting applications and low cost switch-mode power supplies. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Emitter Voltage 900 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 9 V IC Collector Current-Continuous 3 A ICM Collector Current-peak tp<5ms 5 A IB Base Current-Continuous 1 A PC Collector Power Dissipation TC=25℃ 25 W Ti Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ |
Numéro de pièce similaire - 2SC5353 |
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Description similaire - 2SC5353 |
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