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2SB502 Fiches technique(PDF) 2 Page - Inchange Semiconductor Company Limited

No de pièce 2SB502
Description  Collector-Emitter Breakdown Voltage-: V(BR)CEO= -80V(Min)
PDF  2 Pages
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Fabricant  ISC [Inchange Semiconductor Company Limited]
Site Internet  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2SB502 Fiches technique(HTML) 2 Page - Inchange Semiconductor Company Limited

  2SB502 Datasheet HTML 1Page - Inchange Semiconductor Company Limited 2SB502 Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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INCHANGE Semiconductor
isc Product Specification
isc website：www.iscsemi.cn
2
isc & iscsemi is registered trademark
isc Silicon PNP Power Transistors
2SB502
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC= -0.1A; IB= 0
-80
V
V(BR)CBO
Collector-Base Breakdown Voltage
IC= -2mA; IE= 0
-110
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE= -10mA; IC= 0
-8
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= -3A; IB= -0.3A
-1.5
V
VBE(sat)
Base-Emitter Saturation Voltage
IC= -3A; IB= -0.3A
-1.8
V
ICBO
Collector Cutoff Current
VCB= -50V; IE= 0
-10
μ A
IEBO
Emitter Cutoff Current
VEB= -8V; IC= 0
-100
μ A
hFE-1
DC Current Gain
IC= -0.5A; VCE= -5V
30
280
hFE-2
DC Current Gain
IC= -2.5A; VCE= -5V
15
COB
Output Capacitance
IE= 0; VCB= -10V; f= 1MHz
200
pF
 h
FE Classifications
R
O
Y
30-70
50-140
100-280



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