| Moteur de recherche de fiches techniques de composants électroniques |
|
2SB503 Fiches technique(PDF) 1 Page - Inchange Semiconductor Company Limited |
|
|
|||||||||||||||||||||||||||||
2SB503 Fiches technique(HTML) 1 Page - Inchange Semiconductor Company Limited |
|
1 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc website:www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistors 2SB503 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min) ·High Power Dissipation- : PC= 25W(Max)@TC=25℃ APPLICATIONS ·Designed for audio power amplifier and regulator applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -70 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -8 V IC Collector Current-Continuous -3 A PC Collector Power Dissipation @Ta=25℃ 1.5 W Collector Power Dissipation @TC=25℃ 25 TJ Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ |
Numéro de pièce similaire - 2SB503 |
|
Description similaire - 2SB503 |
|
|
|
Lien URL |
| ALLDATASHEET vous a-t-il été utile ? [ DONATE ] |
À propos de Alldatasheet | Publicité | Contactez-nous | Politique de confidentialité | Lien vers la fiche technique | Echange de liens | Fabricants All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |