90N06 datasheet(1/2 Pages) ISC

No de pièce	90N06

Description	Drain Current ?밒D= 90A@ TC=25C

PDF	2 Pages

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Fabricant	ISC [Inchange Semiconductor Company Limited]

Site Internet	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

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1

isc N-Channel MOSFET Transistor

90N06

FEATURES

·

·Drain Current –ID= 90A@ TC=25℃

·Drain Source Voltage-

: VDSS= 60V(Min)

·Static Drain-Source On-Resistance

: RDS(on) = 0.003Ω(Max)

APPLICATIONS

• White LED boost converters

• Automotive Systems

• Industrial DC/DC Conversion Circuits

ABSOLUTE MAXIMUM RATINGS(Ta=25℃

℃

℃)

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

VALUE

UNIT

VDSS

Drain-Source Voltage

60

V

VGS

Gate-Source Voltage-Continuous

±20

V

ID

Drain Current-Continuous

90

A

IDM

Drain Current-Single Pluse

360

A

PD

Total Dissipation

125

W

TJ

Max. Operating Junction Temperature

175

℃

Tstg

Storage Temperature

-55~175

℃

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance, Junction to Case

1

℃/W

Rth j-a

Thermal Resistance, Junction to Ambient

62.5

℃/W

Numéro de pièce similaire - 90N06

Fabricant	No de pièce	Fiches technique	Description
Unisonic Technologies	90N02	131Kb / 3P	90A, 20V N-CHANNEL POWER MOSFET
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	90N02L-TM3-T	131Kb / 3P	90A, 20V N-CHANNEL POWER MOSFET
VBsemi Electronics Co.,...	90N03	1,001Kb / 7P	N-Channel 30-V (D-S) MOSFET
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