3DD208 datasheet(1/2 Pages) ISC

No de pièce	3DD208

Description	Collector-Emitter Breakdown Voltage-: V(BR)CEO= 200V(Min.)

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Fabricant	ISC [Inchange Semiconductor Company Limited]

Site Internet	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

1

isc website：www.iscsemi.cn

isc Silicon NPN Power Transistor

3DD208

DESCRIPTION

·Collector-Emitter Breakdown Voltage-

: V(BR)CEO= 200V(Min.)

·DC Current Gain-

: hFE= 30~250(Min.)@IC= 0.5A

·Collector-Emitter Saturation Voltage-

: VCE(sat)= 2.0V(Max)@ IC= 1A

APPLICATIONS

·Designed for switching regulator and power amplifier

applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

300

V

VCEO

Collector-Emitter Voltage

200

V

VEBO

Emitter-Base Voltage

6

V

IC

Collector Current-Continuous

3

A

PC

Collector Power Dissipation@TC=25℃

50

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature

-55~150

℃

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Inchange Semiconductor ...	2SA1080	98Kb / 2P	Collector-Emitter Breakdown Voltage- : V(BR)CEO= -40V(Min.)
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	3DD8B	190Kb / 2P	Collector-Emitter Breakdown Voltage-: V(BR)CEO= 50V(Min)
	3DD8F	190Kb / 2P	Collector-Emitter Breakdown Voltage-: V(BR)CEO= 200V(Min)
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	BUY73	193Kb / 2P	Collector-Emitter Breakdown Voltage-: V(BR)CEO= 200V(Min.)
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