GaAs SP6T 2.5 V High Power Switch

Dual / Tri / Quad-Band GSM Applications

V6

MASWSS009

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Features

 Supplied as Known Good Die

 Dual/tri/quad-band GSM/GPRS/EDGE

 Low Voltage: 2.5V Operation

 Low Harmonics: -72 dBc at +35 dBm & 1 GHz

 Low Insertion Loss: 0.5 dB at 1 GHz

 High Tx-Rx Isolation: 38 dB at 2 GHz

Description

M/A-COM’s MASWSS0091 is a GaAs PHEMT

MMIC single pole six throw (SP6T) high power

switch die. The MASWSS0091 is ideally suited for

applications where high power, low control voltage,

low insertion loss, high isolation, small size and low

cost are required. The MASWSS0091 is designed

for dual-, tri-, and quad-band GSM and DCS/PCS

handset systems that connect separate transmit and

receive functions to a common antenna, and can be

used in all systems operating up to 2.5 GHz

requiring high power at low control voltage.

The MASWSS0091 is fabricated using a 0.5 micron

gate length GaAs PHEMT process. The process

features full passivation for performance and

reliability.

Part Number

Package

MASWSS0091SMB

Sample Test Board

MASWSS0091-DIE

Separated die on Grip Ring

1. Die quantity varies.

Die Layout

VTx1

GND

VRx2

VRx4

Tx2

ANT

VTx2

Rx2

VRx3

Rx4

Tx1

ANT

Rx3

GND

VRxC

Rx1

VRx1

Pad Layout

PAD Name

Description

Tx1

Tx1 Port

VTx1

Tx1 Control

ANT

Antenna Port

VTx2

Tx2 Control

Tx2

Tx2 Port

VRx4

Rx4 Control

Rx4

Rx4 Port

GND

Ground

Rx3

Rx3 Port

VRx3

Rx3 Control

VRxC

Rx Common Control

VRx2

Rx2 Control

Rx2

Rx2 Port

GND

Ground

Rx1

Rx1 Port

VRx1

Rx1 Control

ANT

Redundant ANT Pad

Parameter

Absolute Maximum

Input Power

(0.5 - 2.5 GHz, 2.5V Control)

+38 dBm

Voltage

±8.5 volts

Operating Temperature

-40°C to +85°C

Storage Temperature

-65°C to +150°C

2. Exceeding any one or combination of these limits may cause

permanent damage to the device.