MICROWAVE CORPORATION

8 - 321

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order Online at www.hittite.com

8

HMC490LP5

GaAs PHEMT MMIC LOW NOISE

HIGH IP3 AMPLIFIER, 12 - 16 GHz

v00.0404

Outline Drawing

Absolute Maximum Ratings

Drain Bias Voltage (Vdd1, Vdd2, Vdd3)

+5.5 Vdc

Gate Bias Voltage (Vgg)

-4.0 to 0 Vdc

RF Input Power (RFin)(Vdd = +5.0 Vdc)

+10 dBm

Channel Temperature

175 °C

Continuous Pdiss (T= 85 °C)

(derate 29 mW/°C above 85 °C)

2.65 W

Thermal Resistance

(channel to ground paddle)

34 °C/W

Storage Temperature

-65 to +150 °C

Operating Temperature

-40 to +85 °C

Vdd (Vdc)

Idd (mA)

+3.0

140

+3.5

154

+4.0

168

+4.5

188

+5.0

200

+5.5

208

Typical Supply Current vs. Vdd

Note: Amplifier will operate over full voltage ranges shown above.

NOTES:

1. ALL DIMENSIONS ARE IN INCHES [MM]

2. DIE THICKNESS IS .004”

3. TYPICAL BOND IS .004” SQUARE

4. BACKSIDE METALLIZATION: GOLD

5. BOND PAD METALLIZATION: GOLD

6. BACKSIDE METAL IS GROUND.

7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.