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SSM3K56CT Fiches technique(PDF) 4 Page - Toshiba Semiconductor |
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SSM3K56CT Fiches technique(HTML) 4 Page - Toshiba Semiconductor |
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4 / 8 page ![]() SSM3K56CT 4 5.5. 5.5. 5.5. 5.5. Source-Drain Characteristics (Unless otherwise specified, T Source-Drain Characteristics (Unless otherwise specified, T Source-Drain Characteristics (Unless otherwise specified, T Source-Drain Characteristics (Unless otherwise specified, Taaaa = 25 = 25 = 25 = 25 )))) Characteristics Diode forward voltage (Note 1) Symbol VDSF Test Condition ID = -800 mA, VGS = 0 V Min Typ. -0.82 Max -1.2 Unit V Note 1: Pulse measurement. 6. 6. 6. 6. Marking Marking Marking Marking Fig. Fig. Fig. Fig. 6.1 6.1 6.1 6.1 Marking Marking Marking Marking Fig. Fig. Fig. Fig. 6.2 6.2 6.2 6.2 Pin Condition(top view) Pin Condition(top view) Pin Condition(top view) Pin Condition(top view) 2014-04-04 Rev.3.0 |
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