MICROWAVE CORPORATION

8 - 65

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order Online at www.hittite.com

8

Outline Drawing

Absolute Maximum Ratings

Collector Bias Voltage (Vcc)

+7.0 Vdc

RF Input Power (RFin)(Vs = +5.0 Vdc)

+10 dBm

Junction Temperature

150 °C

Continuous Pdiss (T = 85 °C)

(derate 5.21 mW/°C above 85 °C)

0.339 W

Thermal Resistance

(junction to ground paddle)

192 °C/W

Storage Temperature

-65 to +150 °C

Operating Temperature

-40 to +85 °C

HMC311LP3

v01.0604

InGaP HBT GAIN BLOCK

MMIC AMPLIFIER, DC - 6.0 GHz

NOTES:

1. MATERIAL PACKAGE BODY: LOW STRESS INJECTION MOLDED

PLASTIC SILICA AND SILICON IMPREGNATED.

2. LEAD AND GROUND PADDLE MATERIAL: COPPER ALLOY

3. LEAD AND GROUND PADDLE PLATING: Sn/Pb SOLDER

4. DIMENSIONS ARE IN INCHES [MILLIMETERS].

5. LEAD SPACING TOLERANCE IS NON-CUMULATIVE

6. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM.

PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM.

7. PACKAGE WARP SHALL NOT EXCEED 0.05mm.

8. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED

TO PCB RF GROUND.

9. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED PCB

LAND PATTERN.