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PE4152A-Z Fiches technique(PDF) 2 Page - Peregrine Semiconductor |
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PE4152A-Z Fiches technique(HTML) 2 Page - Peregrine Semiconductor |
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2 / 20 page ![]() PE4152 Quad MOSFET Mixer Page 2 DOC-64061-3 – (02/2016) www.psemi.com Absolute Maximum Ratings Exceeding absolute maximum ratings listed in Table 1 may cause permanent damage. Operation should be restricted to the limits in Table 2. Operation between operating range maximum and absolute maximum for extended periods may reduce reliability. ESD Precautions When handling this UltraCMOS device, observe the same precautions as with any other ESD-sensitive devices. Although this device contains circuitry to protect it from damage due to ESD, precautions should be taken to avoid exceeding the rating specified in Table 1. Latch-up Immunity Unlike conventional CMOS devices, UltraCMOS devices are immune to latch-up. Recommended Operating Conditions Table 2 lists the recommending operating conditions for the PE4152. Devices should not be operated outside the recommended operating conditions listed below. Table 1 • Absolute Maximum Ratings for PE4152 Parameter/Condition Min Max Unit Supply voltage, VDD 4.0 V Maximum DC plus peak AC across drain-source ±3.3 V Maximum DC current across drain-source 6mA Maximum AC current across drain-source 36 mAP-P Storage temperature range –65 +150 °C Operating junction temperature +125 °C ESD voltage HBM, all pins(*) 1000 V Note: * Human body model (MIL-STD 883 Method 3015). Table 2 • Recommended Operating Conditions for PE4152 Parameter Min Typ Max Unit Supply voltage, VDD 2.9 3.1 V Operating temperature range –40 +85 °C LO input power (LO enable) –10 –6 dBm LO input power (LO bypass) 23 dBm RF input power (LO enable) 2dBm RF input power (LO bypass) 2dBm |
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