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RT3PDDM Fiches technique(PDF) 1 Page - Isahaya Electronics Corporation |
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RT3PDDM Fiches technique(HTML) 1 Page - Isahaya Electronics Corporation |
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1 / 3 page ![]() RT3PDDM Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type ISAHAYA ELECTRONICS CORPORATION DESCRIPTION RT3PDDM is composite transistor built with two RT1P237 chips in SC-88 package. FEATURE Silicon epitaxial type Each transistor elements are independent. Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Interface circuit, Driver circuit OUTLINE DRAWING Unit:mm MAXIMUM RATING(Ta=25℃)(RTr1, RTr2 COMMON) SYMBOL PARAMETER RATING UNIT VCBO Collector to Base voltage -50 V VEBO Emitter to Base voltage -6 V VCEO Collector to Emitter voltage -50 V VIN Input voltage -12 V IC Collector current -100 mA ICM Peak Collector current -200 mA PT Collector dissipation(Total) 150 mW Tj Junction temperature + 150 ℃ Tstg Storage temperature -55~+150 ℃ ELECTRICAL CHARACTERISTICS(Ta=25℃)(RTr1, RTr2 COMMON) SYMBOL PARAMETER TEST CONDITIONS LIMITS UNIT MIN TYP MAX V(BR)CEO Collector to Emitter break down voltage I C=-100µA,RBE=∞ -50 - - V ICBO Collector cut off current VCB=-50V,I E =0 - - -0.1 µA IEBO Emitter cut off current VEB=-5V,I C =0 -76 -102 -147 µA hFE DC forward current gain VCE=-5V,I C =-10mA 80 - - - VCE(sat) Collector to Emitter saturation voltage I C =-10mA,I B =-0.5mA - - -0.3 V VI(ON) Input on voltage VCE=-0.2V,I C =-5mA - -0.7 -1.1 V VI(OFF) Input off voltage VCE=-5V,I C =-100µA -0.5 -0.6 - V R1 Input resistor - 1.5 2.2 2.9 kΩ R2/R1 Resistor ratio - 17 22 26 - fT Gain band width product VCE=-6V,I E =10mA - 150 - MHz MARKING D P D 1 2 3 6 5 4 . 電極接続 ①:EMITTER1 ②:BASE1 ③:COLLECTOR2 ④:EMITTER2 ⑤:BASE2 ⑥:COLLECTOR1 JEITA:SC-88 JEDEC:- ①② ⑥ ③ ④ ⑤ RTr1 RTr2 R2 R2 R1 R1 1.25 2.1 ① ② ③ ⑤ ④ ⑥ |
Numéro de pièce similaire - RT3PDDM |
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Description similaire - RT3PDDM |
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