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Subject to change without notice.

www.cree.com/rf

CGH40120F

120 W, RF Power GaN HEMT

Cree’s CGH40120F is an unmatched, gallium nitride (GaN) high electron

mobility transistor (HEMT). The CGH40120F, operating from a 28 volt

rail, offers a general purpose, broadband solution to a variety of RF and

microwave applications. GaN HEMTs offer high efficiency, high gain and

wide bandwidth capabilities making the CGH40120F ideal for linear and

compressed amplifier circuits. The transistor is available in a flange

package.

FEATURES

• Up to 2.5 GHz Operation

• 20 dB Small Signal Gain at 1.0 GHz

• 15 dB Small Signal Gain at 2.0 GHz

• 120 W Typical P

SAT

• 70 % Efficiency at P

SAT

• 28 V Operation

APPLICATIONS

• 2-Way Private Radio

• Broadband Amplifiers

• Cellular Infrastructure

• Test Instrumentation

• Class A, AB, Linear amplifiers suitable for

OFDM, W-CDMA, EDGE, CDMA waveforms

Package Types: 440193

PN: CGH40120F