ACE2358M datasheet(1/7 Pages) ACE

No de pièce	ACE2358M

Description	N-Channel 60-V MOSFET

PDF	7 Pages

Scroll/Zoom	100%

Fabricant	ACE [ACE Technology Co., LTD.]

Site Internet	http://www.ace-ele.com

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ACE2358M

N-Channel 60-V MOSFET

VER 1.1

1

Description

ACE2358M uses advanced trench technology to provide excellent RDS(ON).

This device particularly suits for low voltage application such as power management of desktop

computer or notebook computer power management, DC/DC converter.

Features

• Low r

DS(on) trench technology

• Low thermal impedance

• Fast switching speed

Applications

• White LED boost converters

• Automotive Systems

• Industrial DC/DC Conversion Circuits

Absolute Maximum Ratings

Parameter

Symbol

Limit

Units

Drain-Source Voltage

VDS

60

V

Gate-Source Voltage

VGS

±20

V

Continuous Drain Current

a

TA=25℃

ID

3.1

A

TA=70℃

2.5

Pulse Drain Current

b

IDM

1.5

A

Continuous Source Current (Diode Conduction)

a

IS

1.9

A

Power Dissipation

a

TA=25℃

PD

1.3

W

TA=70℃

0.8

Operating Temperature / Storage Temperature

TJ/TSTG

-55/150

OC

*1 Pw ≦

10 μs, Duty cycle ≦1 %

*2 When mounted on a 1*0.75*0.062 inch glass epoxy board%

THERMAL RESISTANCE RATINGS

Parameter

Symbol Maximum

Units

Maximum Junction-to-Ambient

a

t <= 10 sec

RθJA

100

OC/W

Steady State

166

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ACE2358M Fiches technique(PDF) 1 Page - ACE Technology Co., LTD.

ACE2358M Fiches technique(HTML) 1 Page - ACE Technology Co., LTD.

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